Xu Jiancheng, Liu Peng, Chen Dingqin. Deposition of Silicon Dioxide at Low Temperature in Plane Type Gunn Domain Avalanche Device[J]. Analysis and Testing Technology and Instruments, 1996, (1): 57-60.
Citation:
Xu Jiancheng, Liu Peng, Chen Dingqin. Deposition of Silicon Dioxide at Low Temperature in Plane Type Gunn Domain Avalanche Device[J]. Analysis and Testing Technology and Instruments, 1996, (1): 57-60.
Xu Jiancheng, Liu Peng, Chen Dingqin. Deposition of Silicon Dioxide at Low Temperature in Plane Type Gunn Domain Avalanche Device[J]. Analysis and Testing Technology and Instruments, 1996, (1): 57-60.
Citation:
Xu Jiancheng, Liu Peng, Chen Dingqin. Deposition of Silicon Dioxide at Low Temperature in Plane Type Gunn Domain Avalanche Device[J]. Analysis and Testing Technology and Instruments, 1996, (1): 57-60.
Deposition of Silicon Dioxide at Low Temperature in Plane Type Gunn Domain Avalanche Device
This paper describes the principle of silicon dioxide deposition at low premature(420℃-450℃)on n-type GaAs epituial material in a plane type Gunn domain avalanche device. The sandwich structure of silicon dioxide as Well as deposition technology are given.We have also shown the circuit diagram of controllable silicon and some relaied important results.
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