ZHANG Zelan, ZENG Libo, QI Yunxin. A Quantitative Method of AB Microscopic Defects in Semi-insulating GaAs Single Crystals[J]. Analysis and Testing Technology and Instruments, 1999, (1): 45-47.
Citation:
ZHANG Zelan, ZENG Libo, QI Yunxin. A Quantitative Method of AB Microscopic Defects in Semi-insulating GaAs Single Crystals[J]. Analysis and Testing Technology and Instruments, 1999, (1): 45-47.
ZHANG Zelan, ZENG Libo, QI Yunxin. A Quantitative Method of AB Microscopic Defects in Semi-insulating GaAs Single Crystals[J]. Analysis and Testing Technology and Instruments, 1999, (1): 45-47.
Citation:
ZHANG Zelan, ZENG Libo, QI Yunxin. A Quantitative Method of AB Microscopic Defects in Semi-insulating GaAs Single Crystals[J]. Analysis and Testing Technology and Instruments, 1999, (1): 45-47.
A Quantitative Method of AB Microscopic Defects in Semi-insulating GaAs Single Crystals
The microscopic characteristics of AB microdefects in LEC undoped semi-insulating GaAs single crystals have been studied. A new method for auto mesurement of microdefects is proposed and realized by WD-5 image processing and analysis system.
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