CHEN Yong,DENG Hong,JI Hong. Characterization of Structure of GaN Films by High Resolution X-ray Diffraction Analysis[J]. Analysis and Testing Technology and Instruments, 2009, 15(1).
Citation:
CHEN Yong,DENG Hong,JI Hong. Characterization of Structure of GaN Films by High Resolution X-ray Diffraction Analysis[J]. Analysis and Testing Technology and Instruments, 2009, 15(1).
CHEN Yong,DENG Hong,JI Hong. Characterization of Structure of GaN Films by High Resolution X-ray Diffraction Analysis[J]. Analysis and Testing Technology and Instruments, 2009, 15(1).
Citation:
CHEN Yong,DENG Hong,JI Hong. Characterization of Structure of GaN Films by High Resolution X-ray Diffraction Analysis[J]. Analysis and Testing Technology and Instruments, 2009, 15(1).
Characterization of Structure of GaN Films by High Resolution X-ray Diffraction Analysis
High-resolution X-ray diffractometry was used to analyze GaN layers grown on sapphire using a metal-organic chemical vapor deposition(MOCVD) method.The crystal structures were determined by the absolute measurement,and the dislocation densities and dislocation torsion angle were determined by the in-plane grazing incidence.
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