Preparation of Bottom Electrode for PZT Ferroelectric Thin Films

Ti/Pt bottom electrodes with thickness of about 20 nm and 100 nm have been synthesized on Si（001）substrates by using a magnetron sputtering method, the Ti electrode is used as the buffer, then PZT thin films are grown on the electrode. The relationship of the preparation technology of Pt/Ti electrode on the structure and property of the film has been discussed. The results show that spurttering temperature and annealing temperature are important to the bottom electrode, and also the compactability of the electrode has key influence on the growth of PZT thin films.